Bandgap scaling in bilayer graphene antidot lattices.
نویسندگان
چکیده
On the basis of a tight binding model we reveal how the bandgap in bilayer graphene antidot lattices (GALs) follows a different scaling law than in monolayer GALs and we provide an explanation using the Dirac model. We show that previous findings regarding the criteria for the appearance of a bandgap in monolayer GALs are equally applicable to the bilayer case. Furthermore, we briefly investigate the optical properties of bilayer GALs and show that estimates of the bandgap using optical methods could lead to overestimates due to weak oscillator strength of the lowest transitions. Finally, we investigate the effect of imposing an electric field perpendicular to the bilayer GAL structure and find that the bandgap tunability may be extended as compared to pristine bilayer graphene.
منابع مشابه
Geometrical effects on the thermoelectric properties of ballistic graphene antidot lattices
The thermoelectric properties of graphene-based antidot lattices are theoretically investigated. A third nearest-neighbor tight-binding model and a fourth nearest-neighbor force constant model are employed to study the electronic and phononic band structures of graphene antidot lattices with circular, rectangular, hexagonal, and triangular antidot shapes. Ballistic transport models are used to ...
متن کاملAn Investigation of the Geometrical Effects on the Thermal Conductivity of Graphene Antidot Lattices
In this work we investigate the thermal conductivity of graphene-based antidot lattices. A third nearest-neighbor tight-binding model and a forth nearest-neighbor force constant model are employed to study the electronic and phononic band structures of graphene-based antidot lattices. Ballistic transport models are used to evaluate the electronic and the thermal conductivities. Methods to reduc...
متن کاملPolaronic signatures and spectral properties of graphene antidot lattices
We explore the consequences of electron-phonon (e-ph) coupling in graphene antidot lattices (graphene nanomeshes), i.e., triangular superlattices of circular holes (antidots) in a graphene sheet. They display a direct band gap whose magnitude can be controlled via the antidot size and density. The relevant coupling mechanism in these semiconducting counterparts of graphene is the modulation of ...
متن کاملElectronic properties of graphene antidot lattices
Graphene antidot lattices constitute a novel class of nano-engineered graphene devices with controllable electronic and optical properties. An antidot lattice consists of a periodic array of holes that causes a band gap to open up around the Fermi level, turning graphene from a semimetal into a semiconductor. We calculate the electronic band structure of graphene antidot lattices using three nu...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید
ثبت ناماگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید
ورودعنوان ژورنال:
- Journal of physics. Condensed matter : an Institute of Physics journal
دوره 27 22 شماره
صفحات -
تاریخ انتشار 2015